Journal Title

Journal of Vacuum Science and Technology B

Publication Date

1988

Abstract

We report the fabrication of lateral pnp bipolar transistors using focused ion beam (FIB) implants of boron and phosphorus for the collector and base, respectively. The implants of B+, P+, and P+ + were all at a dose of 1×1013 /cm2 and a beam voltage of 75 kV. These implants defined spaces between the emitter and collector regions of 0.5–1.50 μm; which, after diffusion and zero voltage depletion width effects were considered, produced effective on‐wafer device basewidths of ∼0.2 μm. For the best devices, values of hFE near 100 were obtained with good junction characteristics and at peak collector currents of 10 μA/μm of device width.

Subjects

Focused ion beams; Bipolar transistors

Publication Information

Copyright 1998 American Vacuum Society. The original published version of this article may be found at http://dx.doi.org/10.1116/1.584336.

DOI

10.1116/1.584336

Peer-Reviewed

Yes

Document Type

Journal Article

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