Journal of Vacuum Science and Technology B
We report the fabrication of lateral pnp bipolar transistors using focused ion beam (FIB) implants of boron and phosphorus for the collector and base, respectively. The implants of B+, P+, and P+ + were all at a dose of 1×1013 /cm2 and a beam voltage of 75 kV. These implants defined spaces between the emitter and collector regions of 0.5–1.50 μm; which, after diffusion and zero voltage depletion width effects were considered, produced effective on‐wafer device basewidths of ∼0.2 μm. For the best devices, values of hFE near 100 were obtained with good junction characteristics and at peak collector currents of 10 μA/μm of device width.
Focused ion beams; Bipolar transistors
Citation: Pilot Scholars Version (Modified MLA Style)
Clark, William M. Jr.; Utlaut, Mark; Reuss, Robert H.; and Koury, Dan, "High‐gain lateral pnp bipolar transistors made using focused ion beam implantation" (1988). Physics Faculty Publications and Presentations. Paper 35.