Journal of Vacuum Science and Technology B
This article investigates the limitations on the formation of focused ion beam images from secondary electrons. We use the notion of the information content of an image to account for the effects of resolution, contrast, and signal‐to‐noise ratio and show that there is a competition between the rate at which small features are sputtered away by the primary beam and the rate of collection of secondary electrons. We find that for small features, sputtering is the limit to imaging resolution, and that for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may limit the resolution in some cases.
Focused ion beams
Citation: Pilot Scholars Version (Modified MLA Style)
Orloff, Jon; Swanson, L. W.; and Utlaut, Mark, "Fundamental limits to imaging resolution for focused ion beams" (1996). Physics Faculty Publications and Presentations. Paper 34.