Applied Physics Letters
We report, for the first time, the performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB‐DBR). Stripes of Si+ + with a period of 2300 Å and a dose ∼1014 cm−2 are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface‐emitting light from the second‐order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 °C are obtained. The wavelength tuning rate with temperature is 0.8 Å/°C. The coupling coefficient is estimated to be 15 cm−1. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
Focused ion beams; Lasers in physics
Citation: Pilot Scholars Version (Modified MLA Style)
Wu, M. C.; Boenke, M. M.; Wang, S.; Clark, W. M. Jr.; Stevens, E. H.; and Utlaut, Mark, "GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating" (1988). Physics Faculty Publications and Presentations. Paper 1.